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Same model may have multiple batches, images only for reference.
IRFU3607PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3607PBF

Part No IRFU3607PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 75V 56A I-PAK
Datasheet
IRFU3607PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 017723-IRFU3607PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFU3607
Introduction Date March 04, 2008
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFU3607PBF CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 56A at 25°C.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 56A @ 25°C
  • Maximum Rds On: 9 mOhm @ 46A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: IPAK (TO-251)
  • Mounting: Through-hole
  • Power Dissipation: 140W (Tc)
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.4167 $54.1670
23+ $4.4445 $102.2235
35+ $4.3056 $150.6960
48+ $4.1667 $200.0016
63+ $4.0278 $253.7514
84+ $3.6111 $303.3324
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