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Same model may have multiple batches, images only for reference.
IRFU3706PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3706PBF

Part No IRFU3706PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A I-PAK
Datasheet
IRFU3706PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047214-IRFU3706PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU3706PBF CAD Model

Description

The Infineon Technologies IRFU3706PBF is a MOSFET transistor with N-Channel polarity.

  • Power Dissipation: 88W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 75A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 4.5V
  • Maximum Rds On (Id, Vgs): 9 mOhm @ 15A, 10V
  • Package: IPAK (TO-251)
  • Mounting Type: Through Hole
  • Supply and Demand Status: Balanced
  • Quantity per Package: 75

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2601 $62.6010
23+ $5.1374 $118.1602
35+ $4.9769 $174.1915
48+ $4.8164 $231.1872
63+ $4.6558 $293.3154
84+ $4.1742 $350.6328
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,050 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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