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Same model may have multiple batches, images only for reference.
IRFU3910PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3910PBF

Part No IRFU3910PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A I-PAK
Datasheet
IRFU3910PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205410-IRFU3910PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFU3910PBF CAD Model

Description

The Infineon Technologies 205410-IRFU3910PBF is an N-channel polarity-based MOSFET electronic component that has a maximum power dissipation of 79W (Tc) and a continuous drain current of 16A (Tc) @ 25°C. The component has a drain-source breakdown voltage of 100V and a maximum Rds on @ Id, Vgs of 115 mOhm @ 10A, 10V. It is packaged in an IPAK (TO-251) case/package and mounted through a hole. The supply and demand status of the product is sufficient.

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Quantity Unit Price Ext. Price
80+ $0.6396 $51.1680
195+ $0.5248 $102.3360
300+ $0.5084 $152.5200
410+ $0.4920 $201.7200
530+ $0.4756 $252.0680
705+ $0.4264 $300.6120
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Availability: 30,000 pieces
MOQ: 80 pcs
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