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IRFU5505PBF

Part No IRFU5505PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047223-IRFU5505PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFU5505PBF CAD Model

Description

The IRFU5505PBF is a P-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 18A @ 25°C, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Rds On: 110 mOhm @ 9.6A and 10V
  • Power Dissipation: 57W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 650pF @ 25V
  • Package: TO-251-3 short leads, IPak, TO-251AA
  • Applications: Used in automotive and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7065 $52.9875
175+ $0.5797 $101.4475
270+ $0.5616 $151.6320
370+ $0.5435 $201.0950
480+ $0.5254 $252.1920
640+ $0.4710 $301.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 520 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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