The Infineon Technologies IRFU9024NPBF MOSFET is a high-power P-Channel device that is designed to operate in a variety of electronic applications. This MOSFET has a maximum power dissipation of 38W (Tc) and a drain-source breakdown voltage of 55V, making it suitable for use in high voltage circuits. The maximum Rds On @ Id,Vgs is 175 mOhm @ 6.6A, 10V. The device has a maximum gate-source voltage of ±20V and a maximum input capacitance of 350pF @ 25V. The gate-source threshold voltage is 4V @ 250μA, and the maximum gate charge is 19nC @ 10V. The device is available in a IPAK (TO-251) package, and it is mounted using through-hole technology. It can operate in a temperature range of -55°C to 150°C (TJ) and is suitable for use in discrete semiconductor products. However, supply and demand status is sufficient.