The Infineon Technologies IRFU9120N is a P-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 6.6A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 6.6A @ 25°C
• Maximum Power Dissipation: 40W (Tc)
• Maximum Rds On: 480 mOhm @ 3.9A, 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 27nC @ 10V
• Maximum Input Capacitance: 350pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Package: IPAK (TO-251)
• Application: Discrete Semiconductor Products