The Infineon Technologies MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 53A @ 25°C.

• Drain-Source Breakdown Voltage: 55V
• Continuous Drain Current: 53A @ 25°C
• Power Dissipation: 3.8W (Ta), 107W (Tc)
• Maximum Rds On: 16.5 mOhm @ Id,Vgs of 28A, 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 72nC @ 10V
• Package: D2PAK case, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Mounting: through hole
• Temperature Range: -55°C to 175°C (TJ)