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Same model may have multiple batches, images only for reference.
IRFZ46ZSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ46ZSTRLPBF

Part No IRFZ46ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A D2PAK
Datasheet
IRFZ46ZSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 13.6 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047260-IRFZ46ZSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ46ZSTRLPBF CAD Model

Description

The Infineon Technologies IRFZ46ZSTRLPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel
  • Power Dissipation: 82W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 51A (Tc)
  • Maximum Rds On @ Id,Vgs: 13.6 mOhm @ 31A, 10V
  • Package: D2PAK
  • Status: Active
  • Supply and Demand Status: Limited

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