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Same model may have multiple batches, images only for reference.
IRFZ48NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ48NLPBF

Part No IRFZ48NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 64A TO-262
Datasheet
IRFZ48NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 1970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040768-IRFZ48NLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ48NLPBF CAD Model

Description

It has a limited supply and demand status and comes in a tube/rail package.

  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 3.8W (Ta), 130W (Tc)
  • Continuous Drain Current: 64A (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 32A, 10V

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15+ $8.1069 $121.6035
23+ $7.8540 $180.6420
31+ $7.5999 $235.5969
40+ $7.3470 $293.8800
53+ $6.5870 $349.1110
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Availability: 9,300 pieces
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