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Same model may have multiple batches, images only for reference.
IRGP50B60PDPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP50B60PDPBF

Part No IRGP50B60PDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 75A 370W TO247AC
Datasheet
IRGP50B60PDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 50A
Maximum Power Dissipation 370W
Total Switching Energy(Ets) 360μJ (on), 380μJ (off)
Input Type Standard
Gate Charge 240nC
Turn-on and Turn-off delay time 34ns/130ns
Testing Conditions 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 083424-IRGP50B60PDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRGP50B60PD
Introduction Date December 02, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRGP50B60PDPBF CAD Model

Description

The Infineon Technologies 083424-IRGP50B60PDPBF is a high-performance NPT IGBT transistor designed to operate in through-hole mounting. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A.

  • Gate Charge: 240nC
  • Reverse Recovery Time: 50ns
  • Maximum Power Dissipation: 370W
  • Collector-Emitter Saturation Voltage: 2.6V @ 15V, 50A
  • Turn-on Delay Time: 34ns
  • Turn-off Delay Time: 130ns
  • Applications: widely used in power management applications, consumer electronics, and motor drive and control.

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