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Same model may have multiple batches, images only for reference.
IRL1104PBF Real Image
Same model may have multiple batches, images only for reference.

IRL1104PBF

Part No IRL1104PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 104A TO-220AB
Datasheet
IRL1104PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 68nC @ 4.5V
Max Input Capacitance 3445pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047421-IRL1104PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL1104PBF CAD Model

Description

The IRL1104PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 104A @ 25°C, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 104A @ 25°C
  • Maximum Power Dissipation: 167W
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: TO-220AB
  • Maximum Rds On: 8 mOhm @ 62A and 10V
  • Supply and Demand Status: Balanced
  • Package Quantity: 50

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40+ $1.6343 $65.3720
90+ $1.3410 $120.6900
135+ $1.2994 $175.4190
185+ $1.2566 $232.4710
240+ $1.2151 $291.6240
320+ $1.0892 $348.5440
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Availability: 9,060 pieces
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