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Same model may have multiple batches, images only for reference.
IRL1404ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRL1404ZPBF

Part No IRL1404ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A TO-220AB
Datasheet
IRL1404ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 110nC @ 5V
Max Input Capacitance 5080pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205455-IRL1404ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1404ZPBF CAD Model

Description

The Infineon Technologies 205455-IRL1404ZPBF is a N-channel MOSFET transistor designed for use in high power applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 75A @ 25°C
  • Power Dissipation: 230W
  • Package: TO-220AB
  • Mounting: Through Hole
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 3.1 mOhm @ 75A and 10V
This transistor is ideal for use in industrial and high power applications where high voltage and current handling capabilities are required.

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150+ $2.0074 $301.1100
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