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IRL2703PBF

Part No IRL2703PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040789-IRL2703PBF
Family Name IRL2703
Introduction Date June 17, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL2703PBF CAD Model

Description

The Infineon Technologies 040789-IRL2703PBF is a high-performance N-Channel MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Current Collector: 24A
  • Maximum Power Dissipation: 45W (Tc)
  • Package: TO-220AB
  • Mounting: Through-hole
  • Gate Charge: 15nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 14A, 10V
  • Status: Active product
  • Widely Used in: various applications such as power management, motor control, and consumer electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8357 $50.1420
150+ $0.6858 $102.8700
230+ $0.6643 $152.7890
315+ $0.6429 $202.5135
405+ $0.6215 $251.7075
540+ $0.5572 $300.8880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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