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IRL3713SPBF

Part No IRL3713SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 30V 260A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 260A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 3mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5890pF at 15V
Power Dissipation (Maximum) 330W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188483-IRL3713SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3713SPBF CAD Model

Description

The Infineon Technologies 1188483-IRL3713SPBF is a MOSFET technology-based module that has a maximum power dissipation of 330W.

  • Technology: MOSFET
  • Maximum Power Dissipation: 330W
  • Voltage Drain-Source Breakdown: 30V
  • Continuous Drain Current: 260A
  • Transistor Polarity: N-Channel
  • Drive Voltage: 4.5V and 10V
  • Package: D2PAK case with 2 leads and a tab
  • Suitable for: Various electronic devices that require a stable and reliable power supply
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.8015 $81.6030
4+ $33.4788 $133.9152
6+ $32.4324 $194.5944
8+ $31.3860 $251.0880
10+ $30.3407 $303.4070
13+ $27.2014 $353.6182
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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