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Same model may have multiple batches, images only for reference.
IRL3715ZCSTRRP Real Image
Same model may have multiple batches, images only for reference.

IRL3715ZCSTRRP

Part No IRL3715ZCSTRRP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A D2PAK
Datasheet
IRL3715ZCSTRRP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047487-IRL3715ZCSTRRP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3715ZCSTRRP CAD Model

Description

Infineon Technologies' MOSFET with part number IRL3715ZCSTRRP is a N-Channel power MOSFET, designed for use in a wide range of applications.

  • Maximum Power Dissipation: 45W
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Input Capacitance: 870pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 11 mOhm @ 15A, 10V
  • Lifecycle Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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