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Same model may have multiple batches, images only for reference.
IRL530NPBF Real Image
Same model may have multiple batches, images only for reference.

IRL530NPBF

Part No IRL530NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A TO-220AB
Datasheet
IRL530NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017748-IRL530NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL530NPBF CAD Model

Description

The Infineon Technologies 017748-IRL530NPBF is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 17A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A (Tc)
  • Case/Package: TO-220AB
  • Power Dissipation: 79W (Tc)
  • Maximum Rds On: 100 mOhm @ 9A, 10V
  • Gate Charge: 34nC @ 5V
  • Category: Discrete Semiconductor Product
  • Status: Active
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9605 $52.8275
130+ $0.7881 $102.4530
200+ $0.7635 $152.7000
275+ $0.7389 $203.1975
355+ $0.7142 $253.5410
470+ $0.6403 $300.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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