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Same model may have multiple batches, images only for reference.
IRLB3036PBF Real Image
Same model may have multiple batches, images only for reference.

IRLB3036PBF

Part No IRLB3036PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 195A TO-220AB
Datasheet
IRLB3036PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 11210pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 165A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083600-IRLB3036PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLB3036PBF CAD Model

Description

The Infineon Technologies 083600-IRLB3036PBF is an N-Channel MOSFET electronic component.

  • Mounting: through-hole technology
  • Package: tube/rail
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Power Dissipation: 380W (Tc)
  • Maximum Rds On at Id,Vgs: 2.4 mOhm @ 165A, 10V
  • Gate Charge: 140nC @ 4.5V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3048 $52.1920
95+ $1.0706 $101.7070
145+ $1.0372 $150.3940
200+ $1.0037 $200.7400
260+ $0.9703 $252.2780
345+ $0.8699 $300.1155
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