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Same model may have multiple batches, images only for reference.
IRLB4030PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLB4030PBF

Part No IRLB4030PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A TO-220AB
Datasheet
IRLB4030PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 130nC @ 4.5V
Max Input Capacitance 11360pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083549-IRLB4030PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLB4030PBF CAD Model

Description

The Infineon Technologies IRLB4030PBF is a high-performance MOSFET transistor, designed for through-hole mounting.

  • Mounting: through-hole
  • Polarity: N-channel
  • Maximum Power Dissipation: 370W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 180A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 4.3 mOhm @ 110A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 130nC @ 4.5V
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
21+ $2.3826 $50.0346
52+ $1.9550 $101.6600
80+ $1.8939 $151.5120
110+ $1.8328 $201.6080
142+ $1.7717 $251.5814
189+ $1.5884 $300.2076
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Availability: 14,080 pieces
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