The IRLC3615F is a logic-level power MOSFET from Infineon Technologies, designed for applications requiring direct interfacing with logic-level circuitry. This component features a low gate threshold voltage, enabling full operation with low voltage gate drive signals. It's optimized for high-efficiency switching and low conduction losses.

Applications

• Logic-level controlled switching
• Solid-state relays
• Microcontroller-based power control
• DC-DC converters
• Load switching in embedded systems

Features

• Logic-level gate drive
• Low on-state resistance (Rds(on))
• Fast switching speed
• Surface Mount Package (TO-251AA)
• Lead-free and RoHS compliant

Benefits

• Direct compatibility with logic circuits
• Simplified gate drive circuitry
• High energy efficiency
• Compact design for space-constrained applications
• Environmentally friendly

Additional Details

The IRLC3615F operates with a drain-source voltage (Vds) of 150V and a continuous drain current (Id) of up to 6.8A. The low Rds(on) value ensures minimal power dissipation during conduction, enhancing overall efficiency. The surface mount TO-251AA (IPAK) package allows for efficient heat dissipation in a compact footprint. The logic-level gate drive simplifies the design and reduces component count in applications controlled by microcontrollers or other digital logic. The device is lead-free and compliant with RoHS standards, making it suitable for environmentally conscious designs.

Key Specifications:

• Vds (Drain-Source Voltage): 150V
• Id (Continuous Drain Current): 6.8A
• Rds(on) (On-State Resistance): 0.32 Ohms (at Vgs = 10V)
• Vgs(th) (Gate Threshold Voltage): 1V to 2V
• Package: TO-251AA (IPAK)