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Same model may have multiple batches, images only for reference.
IRLH5034TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRLH5034TR2PBF

Part No IRLH5034TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A 5X6 PQFN
Datasheet
IRLH5034TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 150μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 4730pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 1047534-IRLH5034TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLH5034TR2PBF CAD Model

Description

The Infineon Technologies IRLH5034TR2PBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 29A at 25°C and 100A at Tc.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 29A @ 25°C and 100A @ Tc
  • Maximum Power Dissipation: 3.6W (Ta) and 156W (Tc)
  • Maximum Rds On: 2.4 mOhm @ Id,Vgs of 50A, 10V
  • Package: PQFN (5x6)
  • Dimension: 8-PowerVDFN
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 2.5V @ 150μA
  • Maximum Gate Charge: 82nC @ 10V

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