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Same model may have multiple batches, images only for reference.
IRLH7134TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLH7134TRPBF

Part No IRLH7134TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 26A 8PQFN
Datasheet
IRLH7134TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 58nC @ 4.5V
Max Input Capacitance 3720pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1047537-IRLH7134TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLH7134TRPBF CAD Model

Description

The Infineon Technologies IRLH7134TRPBF is an N-channel MOSFET that is designed for use in a variety of applications.

  • Manufacturer: Infineon Technologies
  • Channel Polarity: N-channel
  • Power Dissipation (max): 3.6W (Ta), 104W (Tc)
  • Mounting Type: SMD (SMT)
  • Status: Active
  • Case/Package: 8-PQFN (5x6)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 26A (Ta), 85A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 58nC @ 4.5V
  • Maximum Input Capacitance: 3720pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On @ Id, Vgs: 3.3 mOhm @ 50A, 10V
  • Supply and Demand Status: Balanced

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