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DMP3068L-7

Part No DMP3068L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.9A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 15.9nC @ 10V
Max Input Capacitance 708pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 72 mOhm @ 4.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033851-DMP3068L-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMP3068L-7 CAD Model

Description

Introducing the DMP3068L-7 P-Channel MOSFET from Diodes Incorporated

The DMP3068L-7 is a high-performance P-Channel enhancement mode field-effect transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This device is designed for power management applications and is housed in a compact SOT-23 package, making it ideal for space-constrained applications.

With a -30V drain-source breakdown voltage (V<sub>DS) and a -4.2V gate-source threshold voltage (V<sub>GS(th)), the DMP3068L-7 is optimized for battery management and load switch applications. Its low threshold voltage allows it to be driven by low-voltage control signals, which is ideal for portable electronics that operate on reduced power levels.

The DMP3068L-7 features a low on-resistance (R<sub>DS(on)) of just 65 mOhms at V<sub>GS = -10V, which translates to reduced conduction losses and improved power efficiency. This characteristic is particularly important in applications that demand minimal power loss and heat generation.

Another key attribute of this MOSFET is its high continuous drain current (I<sub>D) of -2.3A. This capability allows the DMP3068L-7 to handle significant power levels, making it suitable for high-performance applications. Additionally, the device's fast switching speed ensures efficient operation at high frequencies, which is beneficial for applications such as DC-DC converters.

Diodes Incorporated has also engineered the DMP3068L-7 with built-in electrostatic discharge (ESD) protection, enhancing its reliability and longevity in the face of unexpected voltage spikes. This feature is crucial for maintaining the integrity of both the MOSFET and the overall electronic system it is a part of.

The combination of its small form factor, low power consumption, and robust performance characteristics make the DMP3068L-7 an excellent choice for designers looking to optimize their power management solutions. Whether it's for battery-powered devices, power supply control, or any other application requiring a dependable P-Channel MOSFET, the DMP3068L-7 from Diodes Incorporated stands out as a superior option.

For detailed specifications and application notes, engineers and product designers are encouraged to consult the comprehensive datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
565+ $0.0885 $50.0025
1,380+ $0.0726 $100.1880
2,135+ $0.0704 $150.3040
2,940+ $0.0681 $200.2140
3,800+ $0.0658 $250.0400
5,085+ $0.0590 $300.0150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 346,033 pieces
MOQ: 565 pcs
Order Increment : 1 pcs
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