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Same model may have multiple batches, images only for reference.
IRLL024ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLL024ZPBF

Part No IRLL024ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 5A SOT-223
Datasheet
IRLL024ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1047566-IRLL024ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLL024ZPBF CAD Model

Description

The Infineon Technologies 464090 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Package: SOT-223
  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 11nC @ 5V
  • Maximum Rds On: 60 mOhm @ 3A, 10V
  • Drive Voltage: 4.5V, 10V
  • Status: not for new designs
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8357 $50.1420
150+ $0.6858 $102.8700
230+ $0.6643 $152.7890
315+ $0.6429 $202.5135
405+ $0.6215 $251.7075
540+ $0.5572 $300.8880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,060 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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