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Same model may have multiple batches, images only for reference.
IRLML5103GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLML5103GTRPBF

Part No IRLML5103GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.76A SOT-23-3
Datasheet
IRLML5103GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 5.1nC @ 10V
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 600 mOhm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro3/SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 61509-IRLML5103GTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLML5103GTRPBF CAD Model

Description

The Infineon Technologies 61509-IRLML5103GTRPBF is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 540mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 760mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 5.1nC @ 10V
  • Maximum Input Capacitance: 75pF @ 25V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 600mA, 10V
  • Popularity: Popular and commonly used

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Pricing & Ordering

Quantity Unit Price Ext. Price
465+ $0.1251 $58.1715
1,125+ $0.1027 $115.5375
1,745+ $0.0995 $173.6275
2,400+ $0.0963 $231.1200
3,105+ $0.0931 $289.0755
4,160+ $0.0834 $346.9440
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