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IRLR2905PBF

Part No IRLR2905PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040807-IRLR2905PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR2905PBF CAD Model

Description

The Infineon Technologies IRLR2905PBF is an N-channel MOSFET transistor that is ideal for use in discrete semiconductor products.

  • Maximum Power Dissipation: 110W
  • Packaging: tube/rail packaging
  • Maximum Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current Rating: 42A @ 25°C
  • Maximum Gate-Source Voltage: ±16V
  • Maximum On-State Resistance: 27mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 48nC @ 5V
  • New Designs Recommendation: not recommended for new designs
  • Supply and Demand Status: limited
  • Popularity: medium popularity rating
  • Temperature Range: -55°C to 175°C
  • Packaging: D-Pak packaging

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5530 $52.5350
225+ $0.4538 $102.1050
345+ $0.4396 $151.6620
475+ $0.4254 $202.0650
610+ $0.4112 $250.8320
815+ $0.3687 $300.4905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,010 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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