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Same model may have multiple batches, images only for reference.
IRLR2905ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR2905ZPBF

Part No IRLR2905ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRLR2905ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047593-IRLR2905ZPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR2905ZPBF CAD Model

Description

The Infineon Technologies N-Channel MOSFET is an electronic component with a drain-source breakdown voltage of 55V and a continuous drain current at 25°C of 42A (Tc).

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Rds On at Id,Vgs: 13.5 mOhm @ 36A, 10V
  • Mounting Style: Surface Mount
  • Case/Package: D-Pak
  • Power Dissipation (max): 110W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Product Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2601 $50.7195
415+ $0.2434 $101.0110
640+ $0.2350 $150.4000
920+ $0.2182 $200.7440
1,195+ $0.2098 $250.7110
1,490+ $0.2014 $300.0860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,640 pieces
MOQ: 195 pcs
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