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Same model may have multiple batches, images only for reference.
IRLR2905ZTRLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLR2905ZTRLPBF

Part No IRLR2905ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRLR2905ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047594-IRLR2905ZTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR2905ZTRLPBF CAD Model

Description

The Infineon Technologies IRLR2905ZTRLPBF is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel: N-channel
  • Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 42A (Tc)
  • Rds On @ Id,Vgs: 13.5 mOhm @ 36A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Input Capacitance: 1570pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Package: D-Pak, TO-252-3, DPak (2 Leads + Tab), SC-63

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195+ $0.2601 $50.7195
415+ $0.2434 $101.0110
640+ $0.2350 $150.4000
920+ $0.2182 $200.7440
1,195+ $0.2098 $250.7110
1,490+ $0.2014 $300.0860
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