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Same model may have multiple batches, images only for reference.
IRLR3105TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3105TRPBF

Part No IRLR3105TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 25A DPAK
Datasheet
IRLR3105TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017794-IRLR3105TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3105TRPBF CAD Model

Description

The Infineon Technologies IRLR3105TRPBF is a MOSFET transistor with N-Channel polarity.

  • Maximum Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 25A (Tc)
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On at Id,Vgs: 37 mOhm @ 15A, 10V
  • Mounting Technology: SMD (SMT) technology
  • Package: D-Pak case
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Applications: power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9605 $52.8275
130+ $0.7881 $102.4530
200+ $0.7635 $152.7000
275+ $0.7389 $203.1975
355+ $0.7142 $253.5410
470+ $0.6403 $300.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,740 pieces
MOQ: 55 pcs
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