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Same model may have multiple batches, images only for reference.
IRLR3714ZTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3714ZTRPBF

Part No IRLR3714ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 37A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 7.1nC @ 4.5V
Max Input Capacitance 560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069745-IRLR3714ZTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 6k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR3714ZTRPBF CAD Model

Description

The Infineon Technologies 069745-IRLR3714ZTRPBF is a N-channel MOSFET transistor designed for use in high power applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 37A
  • Power Dissipation: Up to 35W
  • Package: D-Pak
  • Mounting: Surface mount technology (SMT)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 15 mOhm @ 15A and 10V
  • Ideal for: Industrial and high power applications where high voltage and current handling capabilities are required

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.3343 $58.6744
20+ $6.0176 $120.3520
30+ $5.8293 $174.8790
41+ $5.6410 $231.2810
53+ $5.4539 $289.0567
71+ $4.8891 $347.1261
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Availability: 1,620 pieces
MOQ: 8 pcs
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