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IRLR3715ZCTRLP

Part No IRLR3715ZCTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 49A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 810pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047615-IRLR3715ZCTRLP
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRLR3715ZCTRLP CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel electronic component that is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 49A
  • Maximum Rds on: 11 mOhm @ 15A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Input Capacitance: 810pF @ 10V
  • Maximum Gate Charge: 11nC @ 4.5V
  • Package: D-Pak
  • Mounting: Surface-Mount Technology (SMT)
  • Power Dissipation: 40W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 73,500 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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