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Same model may have multiple batches, images only for reference.
IRLR8103VTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR8103VTRPBF

Part No IRLR8103VTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 91A DPAK
Datasheet
IRLR8103VTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 114380-IRLR8103VTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR8103VTRPBF CAD Model

Description

The Infineon Technologies IPP80N04S3H4AKSA1 is an N-channel MOSFET with a TO-252-3, DPak (2 Leads + Tab), SC-63 case/package.

  • Mounting: Through hole
  • Packaging: Reel - TR
  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation (max): 115W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 91A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 27nC @ 5V
  • Maximum Input Capacitance: 2672pF @ 16V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V
  • Product Type: Discrete semiconductor product
  • Temperature Range: -55°C to 150°C (TJ)

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240+ $0.4235 $101.6400
370+ $0.4103 $151.8110
505+ $0.3970 $200.4850
655+ $0.3838 $251.3890
875+ $0.3441 $301.0875
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