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Same model may have multiple batches, images only for reference.
IRLR8503 Real Image
Same model may have multiple batches, images only for reference.

IRLR8503

Part No IRLR8503
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 44A DPAK
Datasheet
IRLR8503 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047641-IRLR8503
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR8503 CAD Model

Description

The Infineon Technologies IRLR8503 MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 30V, continuous drain current of 44A (Tc), and maximum Rds On of 16 mOhm @ 15A, 10V.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 44A (Tc)
  • Maximum Rds On: 16 mOhm @ 15A, 10V
  • Maximum Power Dissipation: 62W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting: D-Pak
  • Package Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Suitable For: Power Supplies, DC-DC Converters, and Motor Drives

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