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Same model may have multiple batches, images only for reference.
IRLU120NPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLU120NPBF

Part No IRLU120NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A I-PAK
Datasheet
IRLU120NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 185 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047669-IRLU120NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU120NPBF CAD Model

Description

The Infineon Technologies IRLU120NPBF is an N-Channel MOSFET transistor that comes in an IPAK package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Power Dissipation: 48W
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Maximum Rds On: 185 mOhm @ 6A, 10V
  • Package: IPAK

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21+ $4.8121 $101.0541
33+ $4.6617 $153.8361
45+ $4.5113 $203.0085
58+ $4.3610 $252.9380
77+ $3.9098 $301.0546
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Availability: 12,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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