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Same model may have multiple batches, images only for reference.
IRLU2705 Real Image
Same model may have multiple batches, images only for reference.

IRLU2705

Part No IRLU2705
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 28A I-PAK
Datasheet
IRLU2705 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047673-IRLU2705
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLU2705 CAD Model

Description

The Infineon Technologies IRLU2705 is a N-channel MOSFET transistor that is designed to provide high efficiency and low Rds On for power management applications.

  • Manufacturer: Infineon Technologies
  • Product Name: IRLU2705
  • Maximum Power Dissipation: 68W (Tc)
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 28A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Rds On: 40 mOhm @ 17A, 10V
  • Package: I-Pak
  • Mounting Type: Through Hole
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 75

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