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Same model may have multiple batches, images only for reference.
IRLU2705PBF Real Image
Same model may have multiple batches, images only for reference.

IRLU2705PBF

Part No IRLU2705PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 28A I-PAK
Datasheet
IRLU2705PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205485-IRLU2705PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU2705PBF CAD Model

Description

The Infineon Technologies IRLU2705PBF is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 28A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 40 mOhm @ 17A, 10V
  • Maximum Power Dissipation: 68W (Tc)
  • Package: I-Pak
  • Dimensions: TO-251-3 Short Leads, IPak, TO-251AA
  • Status: Obsolete
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9418 $63.5344
18+ $6.5165 $117.2970
28+ $6.3132 $176.7696
38+ $6.1100 $232.1800
49+ $5.9055 $289.3695
66+ $5.2945 $349.4370
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Availability: 9,900 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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