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Same model may have multiple batches, images only for reference.
IRLU7843PBF Real Image
Same model may have multiple batches, images only for reference.

IRLU7843PBF

Part No IRLU7843PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 161A I-PAK
Datasheet
IRLU7843PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 161A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 4380pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 141283-IRLU7843PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU7843PBF CAD Model

Description

The Infineon Technologies IRLU7843PBF is an N-channel MOSFET with a power dissipation (Max) of 140W (Tc).

  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 161A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1556 $52.0020
110+ $0.9482 $104.3020
165+ $0.9186 $151.5690
225+ $0.8889 $200.0025
295+ $0.8593 $253.4935
390+ $0.7704 $300.4560
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Availability: 1,000 pieces
MOQ: 45 pcs
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