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Same model may have multiple batches, images only for reference.
JANSR2N7422U
Same model may have multiple batches, images only for reference.

JANSR2N7422U

Part No JANSR2N7422U
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Termination SMD/SMT
Continuous Drain Current (ID) -14 A
Drain to Source Breakdown Voltage -100 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 125 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 150 W
Radiation Hardening Yes
RoHS Non-Compliant
Win Source Part Number 1016656-JANSR2N7422U
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian JANSR2N7422U CAD Model

Description

The Infineon Technologies 1016656-JANSR2N7422U is a high-performance RF MOSFET transistor with a surface mount termination.

  • Power Dissipation: 150W
  • Drain to Source Breakdown Voltage: -100V
  • Continuous Drain Current: -14A
  • Applications: RF power amplifiers, cellular base stations, and broadcast transmitters
  • Radiation-hardened: ideal for space applications
  • Maximum Operating Temperature: 125°C
  • Minimum Operating Temperature: -55°C
  • RoHS: non-compliant

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1+ $459.8344 $459.8344
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