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Same model may have multiple batches, images only for reference.
JANSR2N7425
Same model may have multiple batches, images only for reference.

JANSR2N7425

Part No JANSR2N7425
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Continuous Drain Current (ID) -22 A
Drain to Source Breakdown Voltage -100 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 125 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 250 W
Radiation Hardening Yes
RoHS Non-Compliant
Win Source Part Number 1015425-JANSR2N7425
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian JANSR2N7425 CAD Model

Description

The JANSR2N7425 is a FET transistor from Infineon Technologies.

  • Maximum Power Dissipation: 250 W
  • Continuous Drain Current (ID): -22 A
  • Drain to Source Breakdown Voltage: -100 V
  • Gate to Source Voltage (Vgs): 20 V
  • Mounting Type: Through hole
  • Maximum Operating Temperature: 125°C
  • RoHS Compliance: Non-compliant

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