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Same model may have multiple batches, images only for reference.
JANTXV2N6845
Same model may have multiple batches, images only for reference.

JANTXV2N6845

Part No JANTXV2N6845
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Continuous Drain Current (ID) -2.6 A
Drain to Source Breakdown Voltage -100 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
On-State Resistance 600 mΩ
Packaging Bulk
Power Dissipation 20 W
Radiation Hardening No
RoHS Non-Compliant
Win Source Part Number 1033027-JANTXV2N6845
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian JANTXV2N6845 CAD Model

Description

The JANTXV2N6845 is a transistor from Infineon Technologies designed for RF applications.

  • Application: RF applications
  • RoHS Compliant: No
  • Supply and Demand Status: shortage
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Continuous Drain Current (ID): -2.6A
  • Drain to Source Breakdown Voltage: -100V

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