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Same model may have multiple batches, images only for reference.
SGP20N60HSXKSA1 Real Image
Same model may have multiple batches, images only for reference.

SGP20N60HSXKSA1

Part No SGP20N60HSXKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SGP20N60HSXKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 20A
Power - Max 178 W
Switching Energy 690µJ
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 18ns/207ns
Test Condition 400V, 20A, 16Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Base Product Number SGP20N
Other Names 2156-SGP20N60HSXKSA1-IT,SGP20N60HS,IFEINFSGP20N60HSXKSA1,SGP20N60HS,SP000683128
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277429-SGP20N60HSXKSA1
Ultra Librarian 3D Model Ultra Librarian SGP20N60HSXKSA1 CAD Model

Description

The SGP20N60HSXKSA1 is a NPT type IGBT transistor with a voltage collector emitter breakdown of 600V and a maximum current collector of 36A.

  • Voltage Collector Emitter Breakdown: 600V
  • Maximum Current Collector: 36A
  • Power Rating: 178W
  • Switching Energy: 690µJ
  • Gate Charge: 100nC
  • td (on/off) @ 25°C: 18ns/207ns
  • Package: TO-220-3
  • Mounting: Through hole

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