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Same model may have multiple batches, images only for reference.
SPA12N50C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA12N50C3XKSA1

Part No SPA12N50C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPA12N50C3XKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31
Package / Case TO-220-3 Full Pack
Base Product Number SPA12N
Other Names SP000216322,SPA12N50C3INR,SPA12N50C3,SPA12N50C3IN,SPA12N50C3X,SPA12N50C3XK,SPA12N50C3XTIN,SPA12N50C3IN,SPA12N50C3XTIN
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 1278343-SPA12N50C3XKSA1
Ultra Librarian 3D Model Ultra Librarian SPA12N50C3XKSA1 CAD Model

Description

The Infineon Technologies SPA12N50C3XKSA1 is an N-channel MOSFET.

  • Drain to Source Voltage: 560V
  • Continuous Drain Current: 11.6A (Tc)
  • Rds On (Max): 380mOhm @ 7A and 10V
  • Vgs(th): 3.9V @ 500μA
  • Mounting: Through hole
  • Package: PG-TO220-3-31
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Status: Obsolete

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