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Same model may have multiple batches, images only for reference.
SPA16N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPA16N50C3

Part No SPA16N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 16A TO220FP
Datasheet
SPA16N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 212014-SPA16N50C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA16N50C3 CAD Model

Description

The SPA16N50C3 is a high-performance MOSFET transistor manufactured by Infineon Technologies.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 560V
  • Continuous Drain Current @ 25°C: 16A (Tc)
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 10A, 10V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Package: tube/rail package
  • Suitable for: various applications

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Quantity Unit Price Ext. Price
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31+ $3.3333 $103.3323
47+ $3.2292 $151.7724
64+ $3.1250 $200.0000
83+ $3.0209 $250.7347
111+ $2.7083 $300.6213
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Availability: 18,000 pieces
MOQ: 13 pcs
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