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SPA20N65C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPA20N65C3

Part No SPA20N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A TO-220
Datasheet
SPA20N65C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34.5W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 065915-SPA20N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA20N65C3 CAD Model

Description

The Infineon Technologies SPA20N65C3 is a N-Channel MOSFET electronic component.

  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 20.7A (Tc)
  • Package: PG-TO220-3
  • Mounting: Through Hole
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Power Dissipation (Max): 34.5W (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Max Gate Charge: 114nC @ 10V
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.7308 $65.5392
58+ $2.2406 $129.9548
90+ $2.1707 $195.3630
124+ $2.1008 $260.4992
160+ $2.0297 $324.7520
214+ $1.8201 $389.5014
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Availability: 21,300 pieces
MOQ: 24 pcs
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