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Same model may have multiple batches, images only for reference.
SPB02N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB02N60C3

Part No SPB02N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 1.8A D2PAK
Datasheet
SPB02N60C3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 042820-SPB02N60C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB02N60C3 CAD Model

Description

The Infineon Technologies 042820-SPB02N60C3 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 25W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 1.1A, 10V
  • Mounting: SMD (SMT)
  • Package: PG-TO263-3-2
  • Gate-Source Threshold Voltage: 3.9V @ 80μA
  • Maximum Gate Charge: 12.5nC @ 10V
  • Maximum Input Capacitance: 200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: obsolete(EOL)
  • Popularity: medium
  • Supply and demand status: balance

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Quantity Unit Price Ext. Price
100+ $0.5879 $58.7900
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
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