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Same model may have multiple batches, images only for reference.
SPB100N04S2-04 Real Image
Same model may have multiple batches, images only for reference.

SPB100N04S2-04

Part No SPB100N04S2-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
SPB100N04S2-04 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 172nC @ 10V
Max Input Capacitance 7220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 212016-SPB100N04S2-04
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB100N04S2-04 CAD Model

Description

The Infineon Technologies 212016-SPB100N04S2-04 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: PG-TO263-3-2
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current @ 25°C: 100A (Tc)
  • Maximum Rds On @ Id, Vgs: 3.3 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 172nC @ 10V
  • Maximum Input Capacitance: 7220pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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100+ $1.7660 $176.6000
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175+ $1.6517 $289.0475
235+ $1.4807 $347.9645
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