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SPB20N60C3

Part No SPB20N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 030744-SPB20N60C3
Family Name SPB20N60C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB20N60C3 CAD Model

Description

The Infineon Technologies SPB20N60C3 is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 20.7A (Tc) at 25°C.

  • Mounting: SMD (SMT)
  • Package: PG-TO263-3-2
  • Category: discrete semiconductor products
  • Maximum Power Dissipation: 208W (Tc)
  • Maximum Rds On @ Id, Vgs: 190 mOhm @ 13.1A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Alternative parts: SiHB21N65EF-GE3, STB27NM60ND, and STB22NM60
  • Halogen-free: Yes
  • RoHS: Compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0525 $60.6300
28+ $4.1457 $116.0796
42+ $4.0162 $168.6804
58+ $3.8866 $225.4228
75+ $3.7570 $281.7750
100+ $3.3684 $336.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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