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Same model may have multiple batches, images only for reference.
SPB35N10 Real Image
Same model may have multiple batches, images only for reference.

SPB35N10

Part No SPB35N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A D2PAK
Datasheet
SPB35N10 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 26.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101480-SPB35N10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPB35N10 CAD Model

Description

The Infineon Technologies SPB35N10 is an N-channel MOSFET transistor.

  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 150W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 35A
  • Gate-Source Threshold Voltage: 4V @ 83μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 25V
  • Maximum Rds On @ 26.4A, 10V: 44 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8489 $59.4230
170+ $0.6965 $118.4050
260+ $0.6745 $175.3700
355+ $0.6537 $232.0635
460+ $0.6318 $290.6280
615+ $0.5660 $348.0900
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Availability: 99,000 pieces
MOQ: 70 pcs
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