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Same model may have multiple batches, images only for reference.
SPB73N03S2L-08 G Real Image
Same model may have multiple batches, images only for reference.

SPB73N03S2L-08 G

Part No SPB73N03S2L-08 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 73A D2PAK
Datasheet
SPB73N03S2L-08 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 55μA
Max Gate Charge 46.2nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 8.1 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 030747-SPB73N03S2L-08 G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB73N03S2L-08 G CAD Model

Description

The Infineon Technologies SPB73N03S2L-08 G is a MOSFET that is designed for use in electronic devices.

  • Package: PG-TO263-3-2
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 107W (Tc)
  • Maximum Rds On: 8.1 mOhm @ 36A, 10V
  • Product Status: obsolete (EOL)
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0915 $60.0325
130+ $0.8963 $116.5190
200+ $0.8686 $173.7200
280+ $0.8397 $235.1160
360+ $0.8120 $292.3200
480+ $0.7277 $349.2960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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