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Same model may have multiple batches, images only for reference.
SPD03N50C3ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD03N50C3ATMA1

Part No SPD03N50C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.2A DPAK
Datasheet
SPD03N50C3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 135μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3-1
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1000087-SPD03N50C3ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD03N50C3ATMA1 CAD Model

Description

The Infineon SPD03N50C3ATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 3.2A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current at 25°C: 3.2A (Tc)
  • Package: PG-TO252-3-1
  • Power Dissipation: 38W (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 135μA
  • Max Gate Charge: 15nC @ 10V
  • Maximum Rds On at Id,Vgs: 1.4 Ohm @ 2A, 10V
  • Category: discrete semiconductor products
  • Mounting: SMD (SMT)

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