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SPD04N60C3ATMA1

Part No SPD04N60C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SPD04N60
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 518330-SPD04N60C3ATMA1
Ultra Librarian 3D Model Ultra Librarian SPD04N60C3ATMA1 CAD Model

Description

The SPD04N60C3ATMA1 is a N-Channel MOSFET from the CoolMOS™ series by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
  • Power Dissipation: 50W
  • Gate Charge (Qg) @ 10V: 25nC
  • Input Capacitance (Ciss) @ 25V: 490pF
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0264 $51.3200
120+ $0.8422 $101.0640
185+ $0.8158 $150.9230
255+ $0.7895 $201.3225
330+ $0.7632 $251.8560
440+ $0.6843 $301.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,490 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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